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| 2SC2734 Silicon NPN Epitaxial REJ03G0705-0200 (Previous ADE-208-1074) Rev.2.00 Aug.10.2005 Application * UHF frequency converter * Local oscillator, wide band amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is "GC". Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 20 11 3 50 150 150 -55 to +150 Unit V V V mA mW C C Rev.2.00 Aug 10, 2005 page 1 of 7 2SC2734 Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Gain bandwidth product Collector output capacitance Conversion gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO VCE(sat) hFE fT Cob CG Min 20 11 3 -- -- 20 1.4 -- -- Typ -- -- -- -- -- 90 3.5 0.9 15 Max -- -- -- 0.5 0.7 200 -- 1.5 -- Unit V V V A V GHz pF dB Test conditions IC = 10 A, IE = 0 IC = 1 mA, RBE = IE = 10 A, IC = 0 VCB = 10 V, IE = 0 IC = 10 mA, IB = 5 mA VCE = 10 V, IC = 5 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz VCC = 6 V, IC = 2 mA, f = 900 MHz, fOSC = 930 MHz (0dBm), fout = 30 MHz VCC = 6 V, IC = 2 mA, f = 900 MHz, fOSC = 930 MHz (0dBm), fout = 30 MHz VCC = 6 V, IC = 5 mA, f = 930 MHz Noise figure NF -- 9 -- dB Oscillating output voltage VOSC -- 140 -- mV Rev.2.00 Aug 10, 2005 page 2 of 7 2SC2734 Main Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150 200 DC Current Transfer Ratio vs. Collector Current DC Current Transfer Ratio hFE VCE = 10 V 160 100 120 80 50 40 0 0 50 100 150 1 2 5 10 20 50 Ambient Temperature Ta (C) Collector Current IC (mA) Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) 2.0 f = 1 MHz IE = 0 Gain Bandwidth Product vs. Collector Current 5 Gain Bandwidth Product fT (GHz) VCE = 10 V 4 1.6 3 1.2 2 0.8 0.4 1 0 1 2 5 10 20 50 0 1 2 5 10 20 50 Collector Current IC (mA) Reverse Transfer Capacitance vs. Collector to Base Voltage Reverse Transfer Capacitance Cre (pF) 2.0 Collector to Base Voltage VCB (V) Conversion Gain vs. Collector Current 20 VCC = 6 V f = 900 MHz fosc = 930 MHz (0 dBm) fout = 30 MHz 1.6 Conversion Gain CG (dB) 50 f = 1 MHz Emitter Common 16 1.2 12 0.8 0.4 8 4 0 1 2 5 10 20 0 2 4 6 8 10 Collector to Base Voltage VCB (V) Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 7 2SC2734 Oscillating Output Voltage vs. Collector Current Noise Figure vs. Collector Current Oscillating Output Voltage VOSC (mV) 20 200 Noise Figure NF (dB) 16 160 12 120 8 4 VCC = 6 V f = 900 MHz fosc = 930 MHz (0 dBm) fout = 30 MHz 1 2 3 4 5 80 VCC = 6 V f = 930 MHz 40 0 0 2 4 6 8 10 Collector Current IC (mA) Oscillating Output Voltage vs. Supply Voltage Collector Current IC (mA) 2nd I.M. Distortion vs. Collector Current Oscillating Output Voltage VOSC (mV) 160 2nd I.M. Distortion 2nd I.M.D. (dB) 200 50 40 120 30 80 IC = 5 mA f = 930 MHz 20 40 10 VCC = 10 V f1 = 600 MHz f2 = 650 MHz f2nd IM = 1,250 MHz Vout = 103 dB 4 8 12 16 20 0 2 4 6 8 10 0 Supply Voltage VCC (V) Collector Current IC (mA) 3rd I.M. Distortion vs. Collector Current Power Gain vs. Frequency 12 3rd I.M. Distortion 3rd I.M.D. (dB) 70 Power Gain PG (dB) f = 700 MHz 60 550 MHz 50 VCC = 10 V f1 = 600 MHz f2 = 650 MHz f3rd IM = 550 MHz 700 MHz Vout = 103 dB 0 4 8 12 16 20 8 4 VCC = 10 V IC = 10 mA Pin = -30 dBm 500 600 700 800 900 1,000 40 0 30 -4 400 20 Collector Current IC (mA) Frequency fT (MHz) Rev.2.00 Aug 10, 2005 page 4 of 7 2SC2734 Conversion Gain, Noise Figure Test Curcuit VBB C2 fosc = 930 MHz (0 dBm) L5 L4 L3 L1 L2 100 0.047 * D.U.T. 8p 12 p L6 1k C3 200 80 p VCC fout = 30 MHz RL = 50 200 p * **** Disk Capacitor Unit R : C: F L:H 23 11 L1 : 1 mm Enameled Copper wire 22 90 120 7 L2 : 1 mm Enameled Copper wire 13 130 90 20 90 13 90 3 130 11 L4 : 1 mm Enameled Copper wire 90 7 7 L3 : 1 mm Enameled Copper wire 4 Unit : mm L5 : Bobbin 5 mm inside dia, 0.2 mm 20 Turns Enameled Copper wire L6 : 0.5 mm Enameled Copper wire 1 Turn inside dia 6 mm C1 : 20 pF max. Air Trimmer Condenser C2, C3 : 1000 pF Air Core Capacitor Rev.2.00 Aug 10, 2005 page 5 of 7 2SC2734 VOSC Test Circuit L3 1000 p VCC Ferrite Bead D.U.T. 9p L2 6.8 k VOSC Output 1SV70 470 L1 120 k 1,000 p VT 1.2 p 330 2,200 p Unit C : F R: VBB 26 L1 : 1 mm Enameled Copper wire 10 5 L2 : 0.8 mm Enameled Copper wire L3 : 0.3 mm Enameled Copper wire, 10 Turns with 470 Resistor Circuit Example-UHF Wide Bandwidth Amplifier (f = 500 MHz to 950 MHz) 92 2p Output RL = 50 L3 L1 L2 5.6 k L5 L6 1.2 p 8 Input Rg = 50 3p 1.5 p D.U.T. 2p 3p 1,000 p 1,000 p VBB 1,000 p Unit R : C: F VCC L1 : 0.5 mm Copper wire 5 Turns inside dia 3 mm L2 : 0.5 mm Copper wire 2 Turns inside dia 2 mm L3 : 0.5 mm Copper wire 2 Turns inside dia 2 mm L4 : 0.5 mm Copper wire 1.5 Turns inside dia 2 mm L5 : 0.5 mm Copper wire 4 Turns inside dia 2 mm L6 : 0.5 mm Copper wire 3 Turns inside dia 2 mm Rev.2.00 Aug 10, 2005 page 6 of 7 2SC2734 Package Dimensions JEITA Package Code SC-59A RENESAS Code PLSP0003ZB-A Package Name MPAK(T) / MPAK(T)V, MPAK / MPAKV MASS[Typ.] 0.011g D e A Q c E HE L A A xM S A b L1 A3 e LP Reference Symbol Dimension in Millimeters A2 A A1 S b b1 c b2 A-A Section e1 c1 I1 Pattern of terminal position areas A A1 A2 A3 b b1 c c1 D E e HE L L1 LP x b2 e1 I1 Q Min 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 Nom 1.1 0.25 0.42 0.4 0.13 0.11 1.5 0.95 2.8 Max 1.3 0.1 1.2 0.5 0.15 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.05 1.95 0.3 Ordering Information Part Name 2SC2734GTL-E Quantity 3000 Shipping Container 178 mm Reel, 8 mm Emboss Taping Rev.2.00 Aug 10, 2005 page 7 of 7 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 (c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .3.0 |
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